US 12,341,115 B2
Bond pad structure with reduced step height and increased electrical isolation
Shih-Pei Chou, Tainan (TW); and Jiech-Fun Lu, Madou Township (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Dec. 20, 2021, as Appl. No. 17/555,896.
Application 17/555,896 is a division of application No. 16/558,556, filed on Sep. 3, 2019, granted, now 11,217,547.
Prior Publication US 2022/0115345 A1, Apr. 14, 2022
Int. Cl. H01L 23/00 (2006.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H01L 24/09 (2013.01) [H01L 24/03 (2013.01); H10F 39/184 (2025.01); H10F 39/8053 (2025.01); H10F 39/811 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor structure, the method comprising:
forming a first bond pad isolation structure within a substrate, wherein the substrate has a front-side surface opposite a back-side surface;
forming second bond pad isolation structures within the substrate, wherein the second bond pad isolation structures are disposed laterally between inner sidewalls of the first bond pad isolation structure, wherein the first bond pad isolation structure and the second bond pad isolation structures are formed concurrently with one another;
forming a bond pad extending through the substrate, wherein the bond pad comprises a conductive body overlying the second bond pad isolation structures, a first conductive protrusion, and a second conductive protrusion, wherein the first and second conductive protrusions extend from the conductive body to below the substrate, wherein a bottom surface of the conductive body is disposed below the back-side surface of the substrate; and
wherein the second bond pad isolation structures contact and extend along opposing sidewalls of the first conductive protrusion and opposing sidewalls of the second conductive protrusion, wherein a topmost surface of the first bond pad isolation structure and topmost surfaces of the second bond pad isolation structures are disposed below the back-side surface, wherein a bottommost surface of the first bond pad isolation structure and bottommost surfaces of the second bond pad isolation structures are disposed above the front-side surface.