US 12,341,113 B2
Mandrel fin design for double seal ring
Shan-Yu Huang, Hsinchu County (TW); Hsueh-Heng Lin, Hsinchu (TW); Shih-Chang Chen, Hsinchu (TW); Hsiao-Wen Chung, Taipei (TW); and Yilun Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 6, 2022, as Appl. No. 17/738,282.
Claims priority of provisional application 63/219,892, filed on Jul. 9, 2021.
Prior Publication US 2023/0010037 A1, Jan. 12, 2023
Int. Cl. H01L 23/58 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/585 (2013.01) [H01L 23/562 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
two circuit regions;
two inner seal rings, each of the two inner seal rings surrounding a respective one of the two circuit regions, wherein each of the inner seal rings has a substantially rectangular periphery with four interior corner stress relief (CSR) structures at four corners of the respective inner seal ring; and
an outer seal ring surrounding the two inner seal rings, wherein the outer seal ring has a substantially rectangular periphery without the CSR structures at four interior corners of the outer seal ring,
wherein the outer seal ring includes a plurality of first dummy fin structures located between each of the two inner seal rings and a respective short side of the outer seal ring,
wherein each of the plurality of first dummy fin structures is parallel with the respective short side of the outer seal ring, and
wherein lengths of the plurality of first dummy fin structures gradually decrease along a direction from the inner seal rings to the respective short side of the outer seal ring.