US 12,341,108 B2
Shielded semiconductor package with open terminal and methods of making
ChangOh Kim, Incheon (KR); KyoWang Koo, Incheon (KR); SungWon Cho, Seoul (KR); BongWoo Choi, Seoul (KR); and JiWon Lee, Seoul (KR)
Assigned to STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed by STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed on Aug. 24, 2023, as Appl. No. 18/455,419.
Application 17/136,197 is a division of application No. 16/220,934, filed on Dec. 14, 2018, granted, now 10,910,322, issued on Feb. 2, 2021.
Application 18/455,419 is a continuation of application No. 17/136,197, filed on Dec. 29, 2020, granted, now 11,784,133.
Prior Publication US 2023/0402401 A1, Dec. 14, 2023
Int. Cl. H01L 23/552 (2006.01); H01L 21/311 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/66 (2006.01)
CPC H01L 23/552 (2013.01) [H01L 21/31144 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 23/3128 (2013.01); H01L 23/66 (2013.01); H01L 24/09 (2013.01); H01L 24/17 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of making a semiconductor device, comprising:
providing a substrate;
depositing an encapsulant over a surface of the substrate, wherein a portion of the surface of the substrate including a plurality of contact pads is exposed from the encapsulant;
providing a jig;
disposing an insulating layer on a tab of the jig;
disposing the substrate over the jig with the tab of the jig over the portion of the surface of the substrate and the portion of the surface of the substrate on the insulating layer;
forming a shielding layer over the encapsulant; and
removing a portion of the shielding layer to expose the portion of the surface of the substrate.