US 12,341,105 B2
Semiconductor device
Kenichi Koi, Nagano (JP); and Hitoshi Ito, Nagano (JP)
Assigned to SHINKO ELECTRIC INDUSTRIES CO., LTD., Nagano (JP)
Filed by SHINKO ELECTRIC INDUSTRIES CO., LTD., Nagano (JP)
Filed on Nov. 9, 2022, as Appl. No. 17/983,531.
Claims priority of application No. 2021-183970 (JP), filed on Nov. 11, 2021; and application No. 2022-116626 (JP), filed on Jul. 21, 2022.
Prior Publication US 2023/0145565 A1, May 11, 2023
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01); H01L 23/498 (2006.01); H01L 25/00 (2006.01); H01L 25/07 (2006.01)
CPC H01L 23/5387 (2013.01) [H01L 21/4853 (2013.01); H01L 23/49811 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/40 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 25/074 (2013.01); H01L 25/50 (2013.01); H01L 23/495 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05583 (2013.01); H01L 2224/05584 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/29191 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/33505 (2013.01); H01L 2224/40101 (2013.01); H01L 2224/40225 (2013.01); H01L 2224/73263 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/8392 (2013.01); H01L 2224/83986 (2013.01); H01L 2224/92246 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/0715 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first semiconductor element comprising a first face and a second face opposite to the first face, wherein a first electrode is provided in the first face and a second electrode is provided in the second face;
a second semiconductor element comprising a third face and a fourth face opposite to the third face, wherein a third electrode is provided in the third face and a fourth electrode is provided in the fourth face;
an insulating base member comprising a fifth face and a sixth face opposite to the fifth face, wherein the first face of the first semiconductor element and the third face of the second semiconductor element are adhesively bonded to the fifth face;
a first wiring that penetrates through the insulating base member to be electrically connected to the first electrode, and that is disposed on the sixth face of the insulating base member;
a second wiring that penetrates through the insulating base member to be electrically connected to the third electrode, and that is disposed on the sixth face of the insulating base member;
a first wiring member that faces the second face of the first semiconductor element, and that is electrically connected to the second electrode; and
a second wiring member electrically connected to the second wiring and comprising a seventh face and an eighth face opposite to the seventh face, wherein the seventh face of the second wiring member faces the sixth face of the insulating base member,
wherein:
the second wiring member is bonded to both the first wiring and the second wiring in a state where the insulating base member is folded;
the first wiring member and the second wiring member face each other, and are electrically connected to each other; and
a current flows in a first direction in the first wiring member, and flows in a second direction opposite to the first direction in the second wiring member.