US 12,341,104 B2
Methods of manufacturing semiconductor devices
Yu-Hung Lin, Taichung (TW); An-Jhih Su, Taoyuan (TW); Der-Chyang Yeh, Hsin-Chu (TW); Shih-Guo Shen, New Taipei (TW); Chia-Nan Yuan, Hsinchu (TW); and Ming-Shih Yeh, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 14, 2024, as Appl. No. 18/442,062.
Application 18/442,062 is a continuation of application No. 17/884,560, filed on Aug. 9, 2022, granted, now 11,935,836.
Application 17/884,560 is a continuation of application No. 16/924,201, filed on Jul. 9, 2020, granted, now 11,450,612, issued on Sep. 20, 2022.
Prior Publication US 2024/0186252 A1, Jun. 6, 2024
Int. Cl. H01L 21/48 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/5381 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor substrate;
forming a plurality of dielectric layers and a plurality of first conductive features in the dielectric layers on the semiconductor substrate;
forming at least one polymer layer and a plurality of second conductive features in the at least one polymer layer on the dielectric layers;
forming a plurality of conductive connectors to electrically connect to the second conductive features; and
cutting the semiconductor substrate, the dielectric layers and the at least one polymer layer into a plurality of dies.