US 12,341,069 B2
Backside metal patterning die singulation system and related methods
Michael J. Seddon, Gilbert, AZ (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed on Feb. 16, 2024, as Appl. No. 18/443,562.
Application 18/443,562 is a continuation of application No. 18/153,133, filed on Jan. 11, 2023, granted, now 11,929,285.
Application 18/153,133 is a continuation of application No. 17/216,167, filed on Mar. 29, 2021, granted, now 11,581,223, issued on Feb. 14, 2023.
Application 17/216,167 is a continuation of application No. 16/505,878, filed on Jul. 9, 2019, granted, now 10,964,596, issued on Mar. 30, 2021.
Claims priority of provisional application 62/796,659, filed on Jan. 25, 2019.
Prior Publication US 2024/0186182 A1, Jun. 6, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/78 (2006.01); H01L 21/027 (2006.01); H01L 21/268 (2006.01); H01L 21/32 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01); H01L 21/66 (2006.01); H01L 23/544 (2006.01)
CPC H01L 21/78 (2013.01) [H01L 21/0274 (2013.01); H01L 21/268 (2013.01); H01L 21/32 (2013.01); H01L 21/32051 (2013.01); H01L 21/32131 (2013.01); H01L 22/20 (2013.01); H01L 23/544 (2013.01); H01L 2223/5446 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of aligning a silicon carbide substrate, the method comprising:
forming a plurality of die on a first side of the silicon carbide substrate;
forming an edge ring on a second side of the silicon carbide substrate;
forming a backside metal layer on the second side of the silicon carbide substrate;
applying a photoresist layer over the backside metal layer; and
aligning the silicon carbide substrate from the second side of the silicon carbide substrate using a plurality of alignment features comprised one of in the edge ring or on the photoresist layer.