US 12,341,067 B2
Manufacturing method of semiconductor device
Meng-Ting Chiang, Taichung (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Nov. 9, 2021, as Appl. No. 17/521,881.
Claims priority of application No. 202111230639.5 (CN), filed on Oct. 22, 2021.
Prior Publication US 2023/0130654 A1, Apr. 27, 2023
Int. Cl. H01L 21/78 (2006.01); H01L 21/268 (2006.01); H01L 23/544 (2006.01); H01L 29/20 (2006.01); H10D 62/85 (2025.01)
CPC H01L 21/78 (2013.01) [H01L 21/268 (2013.01); H01L 23/544 (2013.01); H01L 2223/5446 (2013.01); H10D 62/8503 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A manufacturing method of a semiconductor device, comprising:
providing a semiconductor structure, wherein the semiconductor structure comprises:
a substrate having a first surface and a second surface opposite to the first surface in a vertical direction;
a gallium nitride layer disposed on the first surface of the substrate;
semiconductor device units disposed on the gallium nitride layer; and
a scribe line region disposed on the gallium nitride layer and located between the semiconductor device units, wherein the scribe line region comprises an insulation material, and the scribe line region is sandwiched between the semiconductor device units in a horizontal direction perpendicular to the vertical direction;
forming a trench at the second surface of the substrate, wherein the trench is formed corresponding to the scribe line region in the vertical direction, and the trench penetrates through at least a part of the substrate in the vertical direction;
forming a metal layer on the substrate after the trench is formed;
performing a cutting process to the semiconductor structure after the metal layer is formed for separating the semiconductor device units from one another, wherein at least a part of the metal layer remains on the substrate after the cutting process, and a part of the scribe line region is removed by the cutting process; and
performing an etching treatment to the second surface of the substrate after the step of forming the trench and before the step of forming the metal layer for increasing a roughness of the second surface.