	US 12,341,063 B2
	Interconnect structure, electronic device including the same, and method of manufacturing interconnect structure
Keunwook Shin, Yongin-si (KR); Minsu Seol, Seoul (KR); Sangwon Kim, Seoul (KR); Kyung-Eun Byun, Seongnam-si (KR); and Hyeonjin Shin, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Dec. 8, 2021, as Appl. No. 17/545,468.
Claims priority of application No. 10-2021-0076233 (KR), filed on Jun. 11, 2021.
Prior Publication US 2022/0399228 A1, Dec. 15, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 23/532 (2006.01)

CPC H01L 21/7685 (2013.01) [H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01); H01L 21/76864 (2013.01)]

32 Claims

1. An interconnect structure comprising:

a dielectric layer;

a conductive interconnect on the dielectric layer; and

a graphene cap layer on the conductive interconnect,

wherein the graphene cap layer contains graphene quantum dots including spherical grains, and

the graphene cap layer has a carbon content of 80 at % to 95 at % and an oxygen content of 5 at % to 15 at %, wherein

the dielectric layer surrounds a side surface of the conductive interconnect,

the graphene cap layer is exposed on an upper surface of the conductive interconnect, and covers an entirety of an upper surface of the dielectric layer.