US 12,341,054 B2
Method for fabricating semiconductor device with chelating agent
Wei-Chen Pan, New Taipei (TW); and Chun-Wei Wang, Keelung (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Mar. 30, 2022, as Appl. No. 17/708,146.
Prior Publication US 2023/0317508 A1, Oct. 5, 2023
Int. Cl. H01L 21/762 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/76221 (2013.01) [H01L 21/02043 (2013.01); H01L 21/76235 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, comprising:
forming a first dielectric layer on a substrate;
forming a feature opening to exposing the substrate;
performing a pre-cleaning treatment comprising a pre-cleaning solution to the feature opening;
performing a cleaning process to the feature opening; and
forming a conductive feature in the feature opening;
wherein the pre-cleaning solution comprises a chelating agent and a corrosion inhibitor;
wherein a process time of the pre-cleaning treatment is about 2 minutes;
wherein the chelating agent comprises ethylenediaminetetraacetic acid, polyacrylates, carbonates, phosphonates, gluconates, N,N′-bis(2-hydroxyphenyl)ethylenediiminodiacetic acid, triethylenetetranitrilohexaacetic acid, desferriferrioxamin B, N,N′,N″-tris [2-(N-hydroxycarbonyl)ethyl]-1,3,5-benzenetricarboxamide, or ethylenediaminediorthohydroxyphenylacetic acid.