US 12,341,053 B2
System for backside deposition of a substrate
Ronald Nasman, Averill Park, NY (US); Gerrit J. Leusink, Rexford, NY (US); Rodney L. Robison, East Berne, NY (US); Hoyoung Kang, Guilderland, NY (US); and Daniel Fulford, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Feb. 19, 2024, as Appl. No. 18/581,154.
Application 18/581,154 is a continuation of application No. 16/047,711, filed on Jul. 27, 2018, granted, now 11,908,728, issued on Feb. 20, 2024.
Claims priority of provisional application 62/538,251, filed on Jul. 28, 2017.
Prior Publication US 2024/0194516 A1, Jun. 13, 2024
Int. Cl. H01L 21/687 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/505 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/68735 (2013.01) [C23C 16/4409 (2013.01); C23C 16/4412 (2013.01); C23C 16/455 (2013.01); C23C 16/4585 (2013.01); H01J 37/32449 (2013.01); C23C 16/505 (2013.01); H01L 21/67069 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus for depositing films on a backside of a substrate, the apparatus comprising:
a processing chamber comprising a top wall, a bottom wall and a side wall extending from the top wall to the bottom wall to enclose the processing chamber, the processing chamber having an upper section and a lower section;
a substrate support configured to hold a substrate between the upper section and the lower section, the substrate having a front side surface for electrical devices and a backside surface opposite the front side surface, the substrate support having an annular support surface configured to support the substrate along an entire perimeter of the substrate without being in contact with interior regions of the front side surface and without being in contact with interior regions of the backside surface, the substrate support configured to support the substrate with the front side surface facing the upper section and with the backside surface facing the lower section;
a first showerhead positioned in the processing chamber and configured to flow process gas to the backside surface of the substrate;
a second showerhead positioned in the processing chamber and oriented opposite the first showerhead and configured to flow control gas to the front side surface of the substrate, the substrate support configured to hold the substrate at a spaced apart relationship between the first showerhead and the second showerhead; and
a plasma source for generating deposition gas; and
a controller configured to control the plasma source and flow of the deposition gas from the first showerhead for deposition on the backside surface of the substrate, the controller configured to control flow of the control gas via the second showerhead to maintain a gas pressure differential between the upper section and lower section sufficient to prevent passage of the deposition gas from the lower section to the front side surface of the substrate when the substrate is resting on the substrate support.