US 12,341,032 B2
Methods of selective oxidation on rapid thermal processing (RTP) chamber with active steam generation
Chaitanya Anjaneyalu Prasad, Cupertino, CA (US); Christopher Sean Olsen, Fremont, CA (US); Lara Hawrylchak, Gilroy, CA (US); Erika Gabrielle Hansen, San Jose, CA (US); Daniel C. Glover, Danville, CA (US); Naman Apurva, Patna (IN); and Tsung-Han Yang, Sunnyvale, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on May 2, 2024, as Appl. No. 18/653,955.
Application 18/653,955 is a division of application No. 17/362,760, filed on Jun. 29, 2021, granted, now 11,996,305.
Prior Publication US 2024/0282601 A1, Aug. 22, 2024
Int. Cl. H01L 21/67 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/67115 (2013.01) [H01L 21/02238 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of performing a selective oxidation process on non-metal surfaces, comprising:
forming a first mixture of a carrier gas and a liquid in a mixer having a mixing block coupled to one or more control valves that are fluidly coupled with a mixing line disposed in the mixing block, wherein the mixing block includes a first inlet for a first liquid line that provides the liquid into the mixing line, a second inlet for a first carrier gas line that provides the carrier gas into the mixing line, and an outlet for the first mixture that extends from the mixing line to an outer sidewall of the mixing block;
flowing the first mixture from the mixer to a vaporizer to vaporize the first mixture outside of an RTP chamber; and
delivering the vaporized first mixture to the RTP chamber via a gas delivery line to expose a substrate disposed in the RTP chamber with the vaporized first mixture to perform the selective oxidation process on the substrate at a temperature of about 500 to about 1100 degrees Celsius.