US 12,341,010 B2
Preparation method for semiconductor structure and same
Longyang Chen, Hefei (CN); Shijie Bai, Hefei (CN); Zhongming Liu, Hefei (CN); Yexiao Yu, Hefei (CN); Xianguo Zhou, Hefei (CN); and Bin Zhao, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on May 13, 2022, as Appl. No. 17/743,560.
Application 17/743,560 is a continuation of application No. PCT/CN2022/080318, filed on Mar. 11, 2022.
Claims priority of application No. 202210209445.5 (CN), filed on Mar. 4, 2022.
Prior Publication US 2023/0282479 A1, Sep. 7, 2023
Int. Cl. H01L 21/033 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H10B 12/00 (2023.01)
CPC H01L 21/0337 (2013.01) [H01L 21/0276 (2013.01); H01L 21/0332 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/32135 (2013.01); H01L 21/32139 (2013.01); H10B 12/01 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A preparation method for a semiconductor structure, comprising:
providing a structure to be processed, wherein the structure to be processed comprises a substrate, and an etching target layer, a bottom mask layer and a first mask layer stacked on the substrate;
patterning the first mask layer to form a first pattern, the first pattern exposing parts of the bottom mask layer;
forming spacers with vertical sidewall morphology on sidewalls of the first mask layer;
removing the first mask layer;
forming a filling layer on the bottom mask layer, the filling layer filling a gap between two adjacent ones of the spacers and covering the spacers;
planarizing the filling layer such that an upper surface of the filling layer is flush with upper surfaces of the spacers,
wherein there is a high etching selectivity ratio of a material of the spacers to a material of the filling layer;
removing the spacers;
forming a second mask layer on the filling layer;
etching the second mask layer to form a second pattern, the second pattern exposing parts of the filling layer; and
patterning the filling layer with the second mask layer as a mask to form a filling layer mask.