US 12,341,007 B2
Method of patterning underlying structure
Yun-An Chen, New Taipei (TW); Hsiao-Shan Huang, Taichung (TW); and Hsiao-Chiang Lin, New Taipei (TW)
Assigned to Powerchip Semiconductor Manufacturing Corporation, Hsinchu (TW)
Filed by Powerchip Semiconductor Manufacturing Corporation, Hsinchu (TW)
Filed on Jan. 17, 2023, as Appl. No. 18/155,723.
Claims priority of application No. 111141296 (TW), filed on Oct. 31, 2022.
Prior Publication US 2024/0145244 A1, May 2, 2024
Int. Cl. H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/0274 (2013.01) [H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/31105 (2013.01); H01L 21/31127 (2013.01); H01L 21/31144 (2013.01); H01L 21/76804 (2013.01); H01L 21/76807 (2013.01); H01L 21/76816 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of patterning an underlying structure, comprising:
providing the underlying structure;
forming a first photoresist material on the underlying structure;
patterning the first photoresist material using a first photomask as a mask to form a first patterned photoresist layer;
performing a first patterning process on the underlying structure to form a first patterned underlying structure comprising a first opening, wherein the first patterning process comprises:
etching the underlying structure using the first patterned photoresist layer as a mask;
forming a second photoresist material on the first patterned underlying structure, wherein the second photoresist material fills the first opening;
patterning the second photoresist material using the first photomask as a mask to form a second patterned photoresist layer, wherein the second patterned photoresist layer fills the first opening;
forming a third photoresist material on the first patterned underlying structure and the second patterned photoresist layer;
patterning the third photoresist material using a second photomask as a mask to form a third patterned photoresist layer; and
performing a second patterning process on the first patterned underlying structure to form a second patterned underlying structure comprising the first opening and a second opening, wherein the second patterning process comprises:
etching the first patterned underlying structure using the third patterned photoresist layer as a mask.