US 12,341,005 B2
Formation of SiCN thin films
Varun Sharma, Helsinki (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jan. 4, 2021, as Appl. No. 17/141,049.
Claims priority of provisional application 62/962,575, filed on Jan. 17, 2020.
Prior Publication US 2021/0225634 A1, Jul. 22, 2021
Int. Cl. H01L 21/02 (2006.01)
CPC H01L 21/0228 (2013.01) [H01L 21/02167 (2013.01); H01L 21/02315 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of forming a silicon-containing thin film on a substrate in a reaction space by an atomic layer deposition (ALD) process comprising at least one deposition cycle comprising:
contacting the substrate with a vapor phase silicon precursor comprising a halogen; and
contacting the substrate with an amine reactant, wherein a plasma reactant is not utilized in the deposition cycle,
wherein the silicon precursor comprises a bridged halosilane, wherein the bridged halosilane comprises an aryl bridge, an oxygen bridge, or has a formula XaY3−a—Si—R(Ar)—Si—XbY3−b, wherein X is fluorine (F), chlorine (Cl), bromine (Br) or iodine (I), Y is hydrogen, an alkyl group, or an alkoxy group and a and b are integers greater than or equal to one, wherein R is a substituted or unsubstituted, either saturated or unsaturated, branched or linear alkyl chain, and Ar is a substituted or unsubstituted aromatic group,
and
wherein the silicon-containing thin film comprises a SiCN film.