US 12,341,004 B2
Film formation method and film formation apparatus
Yumiko Kawano, Nirasaki (JP); Shuji Azumo, Nirasaki (JP); and Shinichi Ike, Hwaseong-si (KR)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Appl. No. 17/757,842
Filed by Tokyo Electron Limited, Tokyo (JP)
PCT Filed Dec. 21, 2020, PCT No. PCT/JP2020/047698
§ 371(c)(1), (2) Date Jun. 22, 2022,
PCT Pub. No. WO2021/132163, PCT Pub. Date Jul. 1, 2021.
Claims priority of application No. 2019-239349 (JP), filed on Dec. 27, 2019.
Prior Publication US 2023/0037372 A1, Feb. 9, 2023
Int. Cl. H01L 21/02 (2006.01); C23C 16/04 (2006.01); C23C 16/40 (2006.01); C23C 16/448 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01)
CPC H01L 21/02271 (2013.01) [C23C 16/04 (2013.01); C23C 16/403 (2013.01); C23C 16/405 (2013.01); C23C 16/448 (2013.01); C23C 16/45525 (2013.01); C23C 16/4583 (2013.01); C23C 16/46 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A film formation method comprising:
providing a substrate including, on a surface of the substrate, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed;
supplying, to the surface of the substrate, vapor of a solution that contains a raw material of a self-assembled monolayer and a solvent by which the raw material is dissolved, and selectively forming the self-assembled monolayer in the first region; and
forming a target film in the second region by using the self-assembled monolayer formed in the first region,
wherein the selectively forming the self-assembled monolayer in the first region includes supplying the vapor of the solution to the surface of the substrate to deposit the raw material on the surface, and removing the raw material deposited on the surface and unreacted raw material on the surface, and
wherein the removing the raw material deposited on the surface and unreacted raw material on the surface includes supplying, to the surface, the solvent that is heated to a temperature within a range of 65 degrees C. to 85 degrees C.