| CPC H01J 37/32568 (2013.01) [H01J 37/32091 (2013.01); H01J 37/32642 (2013.01); H01J 37/32715 (2013.01); H01L 21/6833 (2013.01); H01L 21/68735 (2013.01); H01J 2237/2007 (2013.01)] | 12 Claims |
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1. A plasma processing apparatus comprising:
a chamber in which plasma is generated;
a lower electrode provided in the chamber; an electrostatic chuck provided on the lower electrode and on which a substrate is placed;
an edge ring provided around the electrostatic chuck;
a metal member that is arranged along an outer wall of the lower electrode and is grounded;
a driver that includes a mechanical power source that moves the metal member along the outer wall of the lower electrode; and
a controller having at least one processor and a memory with a computer readable program stored therein that upon execution of the computer readable program by the processor configures the controller to
control the driver to maintain a height of the metal member during plasma processing,
calculate an amount of wear of the edge ring based on a cumulative time of the plasma processing, and
calculate an edge drop value based on a distribution of the etching rate (ER) in the vicinity of the edge of the substrate,
control the driver after plasma processing to move the metal member so as to increase an area in which the lower electrode and the metal member overlap each other when viewed in a direction intersecting a surface of the outer wall of the lower electrode based on the calculated amount of wear of the edge ring, to cause an incident angle of ions generated in the plasma to tilt toward an edge side of the substrate,
wherein the incident angle of the ions correlates with the edge drop value of the edge ring and the increase in the area in which the lower electrode and the metal member overlap each other when viewed in a direction intersecting a surface of the outer wall of the lower electrode increases the edge drop value calculated.
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