US 12,340,981 B2
Workpiece processing apparatus with outer gas channel insert
Maolin Long, Santa Clara, CA (US); and Weimin Zeng, Santa Jose, CA (US)
Assigned to Beijing E-Town Semiconductor Technology Co., Ltd., Beijing (CN); and Mattson Technology, Inc., Fremont, CA (US)
Filed by Mattson Technology, Inc., Fremont, CA (US); and Beijing E-Town Semiconductor Technology Co., Ltd., Beijing (CN)
Filed on Dec. 9, 2021, as Appl. No. 17/546,506.
Claims priority of provisional application 63/217,559, filed on Jul. 1, 2021.
Claims priority of provisional application 63/132,530, filed on Dec. 31, 2020.
Prior Publication US 2022/0208523 A1, Jun. 30, 2022
Int. Cl. H01J 37/32 (2006.01); H01L 21/263 (2006.01)
CPC H01J 37/32449 (2013.01) [H01J 37/32651 (2013.01); H01L 21/263 (2013.01); H01J 2237/334 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A gas injection assembly for injecting gas into a processing chamber, the gas injection assembly comprising:
an inlet for receiving a gas flow;
a plurality of gas feed ports for distributing the gas flow received from the inlet; and
a plurality of subchannels vertically arranged inside of the gas injection assembly, including:
an upper subchannel for receiving the gas flow from the inlet and subdividing the gas flow into a set of orifices to form a first gas flow branch and a second gas flow branch, the first gas flow branch corresponding to a first portion of the gas flow passing through a first subset of the set of orifices and the second gas flow branch corresponding to a second portion of the gas flow passing through a second subset of the set of orifices;
a plurality of outlet subchannels for subdividing the gas flow into the plurality of gas feed ports, wherein:
a Faraday shield of the processing chamber defines a first portion of the gas injection assembly, the first portion comprising the plurality of subchannels; and
a dielectric dome of the processing chamber defines a second portion of the gas injection assembly, the second portion comprising the plurality of gas feed ports.