| CPC H01J 37/32357 (2013.01) [C23C 16/45536 (2013.01); C23C 16/45565 (2013.01); H01J 37/32449 (2013.01); H01J 37/32522 (2013.01); H01J 37/32889 (2013.01)] | 20 Claims |

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1. A semiconductor processing system comprising:
a processing chamber;
a remote plasma unit coupled with the processing chamber; and
an adapter coupled with the remote plasma unit, wherein the adapter comprises a body characterized by a first end and a second end opposite the first end, wherein the body defines an opening to a central channel at the first end, wherein the central channel is characterized by a first diameter, wherein the body defines an exit from a plurality of second channels at the second end, wherein the body defines a transition plate that extends between and fluidly couples the central channel and the plurality of second channels within the body between the first end and the second end of the body, wherein the transition plate defines a plurality of orifices and a solid interior region, wherein the plurality of second channels extend from the transition plate to the second end of the body and are characterized by each channel of the plurality of second channels comprising a radius that matches a radius of a respective orifice the plurality of orifices of the transition plate, wherein the body defines a third channel between the transition plate and the second end of the body, wherein the plurality of second channels extend circumferentially about the third channel, wherein the third channel is axially aligned with the central channel, wherein the third channel is fluidly isolated from the central channel and the plurality of second channels within the body, wherein the body defines a port providing access to the third channel, and wherein the central channel extends through the body to a depth at which the port is located.
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