| CPC H01J 37/32183 (2013.01) | 4 Claims |

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1. A plasma processing apparatus, comprising:
a chamber having an opening;
a stage disposed in the chamber, the stage for placing an object to be processed;
a dielectric member closing the opening; and
a plasma generation unit disposed on an opposite side to the chamber with reference to the dielectric member, and configured to, when applied with a high-frequency power, generate a plasma in the chamber, wherein
the plasma generation unit has a first coil including one or a plurality of first conductors connected in parallel with each other, and a second coil disposed so as to surround the first coil and including a plurality of second conductors connected in parallel with each other, and
the number of the second conductors included in the second coil is greater than the number of the first conductors included in the first coil.
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