US 12,340,942 B2
Dielectric composition and multilayered electronic component comprising the same
Tae Young Ham, Suwon-si (KR); Ji Hong Jo, Suwon-si (KR); Seung In Baik, Suwon-si (KR); and Hyung Soon Kwon, Suwon-si (KR)
Assigned to SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-si (KR)
Filed on Apr. 10, 2024, as Appl. No. 18/631,625.
Application 18/631,625 is a continuation of application No. 17/992,469, filed on Nov. 22, 2022, granted, now 11,984,267.
Application 17/992,469 is a continuation of application No. 16/836,324, filed on Mar. 31, 2020, granted, now 11,538,631.
Claims priority of application No. 10-2019-0077574 (KR), filed on Jun. 28, 2019.
Prior Publication US 2024/0258032 A1, Aug. 1, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01G 4/12 (2006.01); C04B 35/468 (2006.01); H01G 4/012 (2006.01); H01G 4/248 (2006.01); H01G 4/30 (2006.01)
CPC H01G 4/1227 (2013.01) [C04B 35/4682 (2013.01); H01G 4/012 (2013.01); H01G 4/248 (2013.01); H01G 4/30 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3236 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/768 (2013.01); C04B 2235/785 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A multilayer electronic component, comprising:
a body including a dielectric layer and an internal electrode; and
an external electrode disposed on the body and connected to the internal electrode,
wherein the dielectric layer comprises a dielectric composition,
wherein the dielectric composition comprises a main ingredient having a perovskite structure represented by ABO3, where A is at least one of barium, strontium, and calcium and B is at least one of titanium, zirconium, and hafnium, and a first accessory ingredient,
wherein the first accessory ingredient comprises 0.1 mole or more of a rare earth element, 0.02 mole or more of niobium, and 0.25 mole or more of magnesium, and a sum of contents of the rare earth element and Nb is 1.5 mole or less, based on 100 mole of the main ingredient,
wherein the rare earth element is one or more selected from the group consisting of Ho, Y, Er, Yb, and Dy,
wherein the dielectric layer has an average thickness of 0.41 μm or less.