US 12,340,926 B2
High-power resistor and fabrication method thereof
Shen-Li Hsiao, Kaohsiung (TW); Hwan-Wen Lee, Kaohsiung (TW); and Fu-Sheng Huang, Kaohsiung (TW)
Assigned to YAGEO CORPORATION, Kaohsiung (TW)
Filed by YAGEO CORPORATION, Kaohsiung (TW)
Filed on Sep. 7, 2022, as Appl. No. 17/930,071.
Claims priority of application No. 202210796868.1 (CN), filed on Jul. 6, 2022.
Prior Publication US 2024/0013957 A1, Jan. 11, 2024
Int. Cl. H01C 17/075 (2006.01); H01C 1/148 (2006.01); H01C 7/18 (2006.01)
CPC H01C 17/075 (2013.01) [H01C 1/148 (2013.01); H01C 7/18 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A fabrication method of a high-power resistor, comprising:
providing a resistance substrate, wherein the resistance substrate includes a copper metal layer;
forming a cuprous oxide layer on the resistance substrate by using the copper metal layer;
sticking the resistance substrate to a ceramic substrate, in which the cuprous oxide layer is located between the resistance substrate and the ceramic substrate;
performing a first sintering process on the resistance substrate and the ceramic substrate to form a composite substrate; and
forming a plurality of terminal electrodes on the composite substrate to form the high-power resistor;
wherein material of the ceramic substrate is aluminum nitride (AlN), and the fabrication method of the high-power resistor further comprises:
performing a second sintering process on the ceramic substrate to form an aluminum oxide layer on a surface of the ceramic substrate before sticking the resistance substrate to the ceramic substrate.