US 12,340,861 B2
Selective per die DRAM PPR for memory device
Amitava Majumdar, Boise, ID (US); Greg S. Hendrix, Boise, ID (US); Anandhavel Nagendrakumar, Boise, ID (US); Krunal Patel, Boise, ID (US); Kirthi Shenoy, Boise, ID (US); Danilo Caraccio, Milan (IT); Ankush Lal, Boise, ID (US); Frank F. Ross, Boise, ID (US); and Adam D. Gailey, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 15, 2023, as Appl. No. 18/169,635.
Claims priority of provisional application 63/408,728, filed on Sep. 21, 2022.
Prior Publication US 2024/0096439 A1, Mar. 21, 2024
Int. Cl. G11C 29/52 (2006.01); G06F 11/10 (2006.01); G11C 29/00 (2006.01)
CPC G11C 29/52 (2013.01) [G06F 11/1048 (2013.01); G11C 29/76 (2013.01); G11C 29/789 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A tangible, non-transitory, computer readable storage medium comprising instructions which, when executed by a processor of a computer system, causes the processor to execute a method comprising:
reading a data block from a first memory address of a dynamic random-access memory of the computer system;
identifying an error in the data block via the processor of the computer system, wherein identifying the error comprises identifying both a row of the first memory address and a die where the error occurred within the row;
correcting the error via the processor generating a corrected data;
writing the corrected data back to the first memory location;
reading the data back from the first memory address to obtain a read-back data;
identifying whether the read-back data has an error or not;
upon determining that the read-back data has an error:
identifying that the die where the error occurred within the first memory address is in need of repair;
upon identifying that the first memory address is in need of repair, repairing the die within the first memory address where the error occurred;
recording the address of the memory error in a long-term historical storage of memory errors; and
upon determining that the read-back data does not have an error, determining that the first memory address has a historical storage record of read errors or that the first memory address does not have a historical storage record of read errors.