US 12,340,094 B2
Storage device and operating method of memory controller
Jinwoo Hong, Suwon-si (KR); Kwangwoo Lee, Suwon-si (KR); and Yunjung Lee, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jan. 24, 2024, as Appl. No. 18/421,594.
Claims priority of application No. 10-2023-0078856 (KR), filed on Jun. 20, 2023.
Prior Publication US 2024/0427498 A1, Dec. 26, 2024
Int. Cl. G06F 3/00 (2006.01); G06F 3/06 (2006.01)
CPC G06F 3/0619 (2013.01) [G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A storage device comprising:
a non-volatile memory configured to output data from selected memory cells based on read voltage information, the read voltage information comprising a start read voltage, an end read voltage, and a read command; and
a memory controller configured to:
determine whether a search region defined by the start read voltage and the end read voltage is within a multi-peak region of a threshold voltage distribution corresponding to a first state of the selected memory cells,
based on the search region being within the multi-peak region, change the search region, and
based on the search region not being within to the multi-peak region, determine a new read voltage using the search region.