US 12,339,769 B2
Memory device, operation method thereof, and memory system
Bailjun Hu, Wuhan (CN); and Guangchang Ye, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Sep. 20, 2023, as Appl. No. 18/370,635.
Application 18/370,635 is a continuation of application No. PCT/CN2023/098946, filed on Jun. 7, 2023.
Prior Publication US 2024/0411685 A1, Dec. 12, 2024
Int. Cl. G06F 12/02 (2006.01)
CPC G06F 12/0246 (2013.01) 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a memory cell array, and
a peripheral circuit coupled to the memory cell array, wherein the peripheral circuit is configured to:
receive a first instruction indicating to write dummy data at a specified location in the memory cell array;
generate the dummy data to be written in response to the first instruction;
write the dummy data to be written at the specified location;
receive a second instruction indicating to perform a read operation on data in the memory cell array; and
return the data to be read in response to the second instruction,
wherein, when the data to be read comprises the dummy data, a second flag is set on a reserved field of a frame header of a returned data frame, and the second flag indicates that read data comprises the dummy data.