US 12,339,548 B2
Electro-optical device and electronic device
Hiroyuki Oikawa, Chitose (JP)
Assigned to SEIKO EPSON CORPORATION, Tokyo (JP)
Filed by SEIKO EPSON CORPORATION, Tokyo (JP)
Filed on Aug. 21, 2024, as Appl. No. 18/810,543.
Claims priority of application No. 2023-134867 (JP), filed on Aug. 22, 2023.
Prior Publication US 2025/0068018 A1, Feb. 27, 2025
Int. Cl. G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H04N 9/31 (2006.01)
CPC G02F 1/136209 (2013.01) [G02F 1/136286 (2013.01); G02F 1/1368 (2013.01); H04N 9/312 (2013.01)] 10 Claims
OG exemplary drawing
 
1. An electro-optical device, comprising:
a substrate;
a transistor including a semiconductor layer including a drain region, a source region, and a channel region located between the drain region and the source region, and extending in a first direction, and a gate electrode;
a scanning line electrically coupled to the gate electrode; and
a first light-blocking part, wherein
the substrate, the semiconductor layer, the gate electrode, and a layer at which the scanning line is provided are arranged in a second direction intersecting the first direction,
the first light-blocking part includes a first portion, a second portion, and a third portion,
the first portion is provided between the substrate and the layer at which the scanning line is provided,
the second portion is provided between the semiconductor layer and the layer at which the scanning line is provided,
the third portion is provided between the gate electrode and the layer at which the scanning line is provided, and
a length of the first portion in the second direction, a length of the second portion in the second direction, and a length of the third portion in the second direction are longer in this order.