US 12,339,494 B2
Edge couplers with a fine-alignment mechanism
Bartlomiej Jan Pawlak, Leuven (BE); Oscar D. Restrepo, Halfmoon, NY (US); Koushik Ramachandran, Wappingers Falls, NY (US); Yusheng Bian, Ballston Lake, NY (US); and Eduardo Cruz Silva, Watervliet, NY (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Jan. 4, 2023, as Appl. No. 18/093,039.
Prior Publication US 2024/0219636 A1, Jul. 4, 2024
Int. Cl. G02B 6/122 (2006.01); G02B 6/12 (2006.01); G02B 6/13 (2006.01)
CPC G02B 6/1228 (2013.01) [G02B 6/13 (2013.01); G02B 2006/12121 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a semiconductor substrate;
a first dielectric layer on the semiconductor substrate, the first dielectric layer including a first cavity and an edge defining a boundary of the first cavity;
an edge coupler including a waveguide core, the waveguide core including an undercut portion that extends past the edge of the first dielectric layer and overhangs the first cavity, and the undercut portion including a bottom surface that adjoins the first cavity; and
a first heater positioned adjacent to the undercut portion of the waveguide core, the first heater spaced by a first gap from the undercut portion of the waveguide core.