US 12,339,331 B2
Thin film magnetic field vector sensor
Emily Geraldine Bittle, Bethesda, MD (US); David James Gundlach, Montgomery Village, MD (US); and Sebastian Engmann, Gaithersburg, MD (US)
Assigned to GUVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, Gaithersburg, MD (US); and THEISS RESEARCH, La Jolla, CA (US)
Filed by Government of the United States of America, as represented by the Secretary of Commerce, Gaithersburg, MD (US)
Filed on Mar. 1, 2023, as Appl. No. 18/116,274.
Claims priority of provisional application 63/315,475, filed on Mar. 1, 2022.
Prior Publication US 2023/0280418 A1, Sep. 7, 2023
Int. Cl. G01R 33/032 (2006.01); H10K 39/34 (2023.01)
CPC G01R 33/032 (2013.01) [H10K 39/34 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A magnetic field sensor, the magnetic field sensor comprising:
a substrate which supports the components of the magnetic field sensor;
an organic photodetector; and
an organic light emitting diode;
wherein the organic photodetector and the organic light emitting diode are arranged in layers;
wherein the organic light emitting diode is oriented to emit photons towards the organic photodetector;
wherein the organic photodetector further comprises an insulating dielectric layer and a metal gate electrode;
wherein the organic light emitting diode further comprises a hole injection/electron blocking layer and an electron injecting/hole blocking layer; and
wherein at least one of the organic photodetector and the organic light emitting diode is a magnetic field sensitive semiconductor comprised of materials including but not limited to: single crystal semiconductors, aligned polymer films, and aligned small molecule films.