US 12,339,312 B2
Method and device for adapting temperatures of semiconductor components
Karl Oberdieck, Neckartenzlingen (DE); Jan Homoth, Reutlingen (DE); Jonathan Winkler, Sonnenbuehl (DE); Manuel Riefer, Reutlingen (DE); Michael Maercker, Stuttgart (DE); and Sebastian Strache, Wannweil (DE)
Assigned to ROBERT BOSCH GMBH, Stuttgart (DE)
Filed by Robert Bosch GmbH, Stuttgart (DE)
Filed on Jan. 17, 2023, as Appl. No. 18/155,380.
Claims priority of application No. 10 2022 200 632.1 (DE), filed on Jan. 20, 2022.
Prior Publication US 2023/0228810 A1, Jul. 20, 2023
Int. Cl. G01R 31/28 (2006.01); G01R 31/26 (2020.01)
CPC G01R 31/2875 (2013.01) [G01R 31/2601 (2013.01); G01R 31/2879 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method for adapting temperatures of semiconductor components, comprising the following steps:
ascertaining a first temperature of a first semiconductor component and a second temperature of a second semiconductor component;
calculating a first temperature deviation which represents a deviation of the first temperature from a reference temperature, and a second temperature deviation, which represents a deviation of the second temperature from the reference temperature; and
adapting a first gate voltage of the first semiconductor component and/or a second gate voltage of the second semiconductor component until the first temperature deviation and the second temperature deviation are smaller than and/or equal to a predefined maximum allowable temperature deviation from the reference temperature, the adaptation of the gate voltage being suitable for changing a power loss of the first and/or second semiconductor components;
wherein the adaptation of the first gate voltage and/or the second gate voltage takes place only when a predefined allowable control range for the first gate voltage and/or the second gate voltage is not exceeded, and the first temperature and/or the second temperature is greater than the reference temperature.