| CPC C30B 9/06 (2013.01) [C30B 11/00 (2013.01); C30B 15/007 (2013.01); C30B 27/02 (2013.01); C30B 29/46 (2013.01); C30B 29/48 (2013.01); C30B 35/00 (2013.01)] | 18 Claims |

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1. A system for growing a CdZnTe crystal, the system comprising:
a crucible operable to contain a solid CdZnTe source;
a heating element operable to melt an upper surface to the solid CdZnTe source and form a tellurium rich melt floating on the solid CdZnTe source, wherein the crucible is operable to contain an encapsulating layer above the tellurium rich melt, wherein the heating element is movable within the crucible and within the tellurium rich melt floating on the solid CdZnTe source;
a rod operable to mechanically support a CdZnTe seed crystal;
a lift mechanism coupled to the rod and including support arms and a support plate disposed in the tellurium rich melt and in contact with the CdZnTe crystal, wherein the rod is operable to lift and rotate the support plate;
one or more vertical temperature shields positioned between sides of the crucible and the CdZnTe seed crystal; and
one or more horizontal temperature shields positioned above the encapsulating layer.
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