	US 12,338,547 B2
	Method for forming silicon-phosphorous materials
Errol Antonio C. Sanchez, Tracy, CA (US); Mark J. Saly, Santa Clara, CA (US); Schubert Chu, San Francisco, CA (US); Abhishek Dube, Fremont, CA (US); and Srividya Natarajan, Saratoga, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Apr. 5, 2023, as Appl. No. 18/131,255.
Application 18/131,255 is a division of application No. 16/530,641, filed on Aug. 2, 2019, granted, now 11,649,560.
Claims priority of provisional application 62/864,260, filed on Jun. 20, 2019.
Prior Publication US 2023/0243068 A1, Aug. 3, 2023
Int. Cl. H01L 21/00 (2006.01); C07F 9/50 (2006.01); C30B 25/02 (2006.01); C30B 29/54 (2006.01); H01L 21/02 (2006.01); H10D 62/13 (2025.01)

CPC C30B 29/54 (2013.01) [C07F 9/5009 (2013.01); C30B 25/02 (2013.01); H01L 21/02521 (2013.01); H01L 21/0262 (2013.01); H10D 62/149 (2025.01)]

26 Claims

1. A method for forming a silicon-phosphorous material on a substrate, comprising:

exposing the substrate to a deposition gas comprising a silicon-phosphorous compound during a deposition process; and

depositing a film comprising the silicon-phosphorous material on the substrate,

wherein the silicon-phosphorous material comprises a phosphorous concentration in a range from about 1×10²²atoms/cm³to about 5×10²²atoms/cm³;

wherein the silicon-phosphorous compound has the chemical formula:

(R_3-vH_vSi)_xPH_yR′_z, and

wherein:

each instance of R is independently an alkyl or a halogen;

each instance of R′ is independently an alkyl or a halogen;

v is 0, 1, 2, or 3;

x is 1, 2, or 3;

y is 0, 1, or 2; and

z is 0, 1, or 2;

wherein x+y+z=3.