	US 12,338,545 B2
	Method for producing a layer of aluminum nitride (ALN) on a structure of silicon or III-V materials
Maxime Legallais, Grenoble (FR); Bassem Salem, Grenoble (FR); Thierry Baron, Grenoble (FR); Romain Gwoziecki, Grenoble (FR); and Marc Plissonnier, Grenoble (FR)
Assigned to COMMISSARIAT L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); C.N.R.S., Paris (FR); and UNIVERSITE GRENOBLE ALPES, Saint Martin d'Heres (FR)
Appl. No. 17/905,125
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); C.N.R.S., Paris (FR); and UNIVERSITE GRENOBLE ALPES, Saint Martin d'Heres (FR)
PCT Filed Feb. 25, 2021, PCT No. PCT/EP2021/054721 § 371(c)(1), (2) Date Aug. 26, 2022, PCT Pub. No. WO2021/170739, PCT Pub. Date Sep. 2, 2021.
Claims priority of application No. 2001978 (FR), filed on Feb. 27, 2020.
Prior Publication US 2023/0111123 A1, Apr. 13, 2023
Int. Cl. C30B 25/16 (2006.01); C23C 16/30 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C30B 25/18 (2006.01); C30B 25/20 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01)

CPC C30B 25/165 (2013.01) [C23C 16/303 (2013.01); C23C 16/4408 (2013.01); C23C 16/45538 (2013.01); C30B 25/18 (2013.01); C30B 25/20 (2013.01); C30B 29/406 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01)]

18 Claims

1. A method for producing an AlN layer on a silicon-based or III-V material-based structure, the method comprising:

two or more deposition cycles performed in a plasma reactor comprising a reaction chamber inside which is disposed a substrate comprising the silicon-based or III-V material-based structure,

wherein each deposition cycle comprises:

depositing an aluminum-based species on an exposed surface of the silicon-based or III-V material-based structure, the depositing comprising injecting an aluminum-based precursor into the reaction chamber; and

nitriding the exposed surface of the silicon-based or III-V material-based structure, the nitriding comprising injecting a nitrogen (N)-based precursor into the reaction chamber and forming a nitrogen-based plasma in the reaction chamber,

wherein a non-zero polarization voltage, as V_{bias_substrate}, is applied to the substrate during the forming of the nitrogen-based plasma,

wherein an absolute value of the non-zero polarization voltage, |V_{bias_substrate}|, is in a range of greater than or equal to 35 Volts and less than or equal to 80 Volts,

wherein the AlN layer is crystalline with a crystallographic orientation of (002), and

wherein the range of the absolute value of the non-zero polarization voltage, |V_{bias_substrate}|, favours the crystallographic orientation of (002).