US 12,338,532 B2
Plasma processing method and plasma processing apparatus
Taro Ikeda, Yamanashi (JP); Eiki Kamata, Yamanashi (JP); and Yoshiyuki Kondo, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Jan. 14, 2022, as Appl. No. 17/576,012.
Claims priority of application No. 2021-006262 (JP), filed on Jan. 19, 2021.
Prior Publication US 2022/0230848 A1, Jul. 21, 2022
Int. Cl. C23C 16/511 (2006.01); H01J 37/32 (2006.01)
CPC C23C 16/511 (2013.01) [H01J 37/3222 (2013.01); H01J 37/32302 (2013.01); H01J 37/32311 (2013.01); H01J 37/3244 (2013.01); H01J 2237/332 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A plasma processing method performed in a plasma processing apparatus having a chamber and a plurality of plasma sources, the plurality of plasma sources including a first plasma source disposed at a center of a ceiling of the chamber, and at least three second plasma sources disposed around the first plasma source and at the ceiling of the chamber, the plasma processing method comprising:
controlling the plurality of plasma sources; and
generating plasma from a processing gas with power output from the plurality of plasma sources, and processing a substrate,
wherein said controlling the plurality of plasma sources includes:
setting one second plasma source among the at least three second plasma sources to a first state referring to an OFF-state or a power state of a first level while other second plasma sources and the first plasma source are set to a second state referring to an ON-state or a power state of a second level higher than the power state of the first level; and
sequentially transitioning the first state from the one second plasma source to another second plasma source among the other second plasma sources, and
wherein sequential transitioning of the first state among the second plasma sources is repeatedly performed during the processing the substrate, and the first plasma source is set to the second state and does not transition between the first state and the second state during the processing of the substrate.