US 12,338,527 B2
Shutter disk for physical vapor deposition (PVD) chamber
Zhiyong Wang, San Jose, CA (US); Halbert Chong, San Jose, CA (US); Irena H. Wysok, San Jose, CA (US); Jianxin Lei, Fremont, CA (US); Rongjun Wang, Dublin, CA (US); Lei Zhou, San Jose, CA (US); Kirankumar Neelasandra Savandaiah, Bangalore (IN); and Sundarapandian Ramalinga Vijayalakshmi Reddy, Bangalore (IN)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Aug. 31, 2022, as Appl. No. 17/900,318.
Claims priority of provisional application 63/240,674, filed on Sep. 3, 2021.
Prior Publication US 2023/0073011 A1, Mar. 9, 2023
Int. Cl. C23C 14/56 (2006.01); C23C 14/06 (2006.01); C23C 14/35 (2006.01); C23C 16/44 (2006.01); H01J 37/32 (2006.01); H01J 37/34 (2006.01)
CPC C23C 14/564 (2013.01) [H01J 37/32862 (2013.01); H01J 37/3497 (2013.01); C23C 14/0605 (2013.01); C23C 14/35 (2013.01); C23C 16/4405 (2013.01); H01J 37/3447 (2013.01); H01J 2237/335 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for cleaning a process kit disposed in an inner volume of a physical vapor deposition (PVD) chamber having a sputtering target disposed in the inner volume of the PVD chamber, the process kit having a carbon-based material adhered thereto, the method comprising:
positioning a non-sputtering shutter disk on a substrate support of the PVD chamber;
energizing an oxygen-containing cleaning gas in a remote plasma source to create a plasma reactive with carbon-based materials and directing the plasma into the inner volume of the PVD chamber;
maintaining the sputtering target at a first temperature; and
separate from the plasma, actively heating the process kit to a second temperature that is greater than the first temperature while exposed to the plasma to remove at least a portion of the carbon-based material adhered to the process kit.