US 12,338,525 B2
Transparent conducting indium doped tin oxide
Krishna K. Uprety, Valencia, CA (US); Khushroo H. Lakdawala, Santa Clarita, CA (US); Russell Shellenberger, Simi Valley, CA (US); and Mahmood Ahmad Ali, Porter Ranch, CA (US)
Assigned to PPG Industries Ohio, Inc., Cleveland, OH (US)
Filed by PPG Industries Ohio, INC., Cleveland, OH (US)
Filed on Jun. 5, 2018, as Appl. No. 16/000,821.
Application 16/000,821 is a division of application No. 14/292,200, filed on May 30, 2014, granted, now 9,988,707.
Prior Publication US 2018/0291497 A1, Oct. 11, 2018
Int. Cl. C23C 14/08 (2006.01); C03C 17/23 (2006.01); C03C 17/245 (2006.01)
CPC C23C 14/086 (2013.01) [C03C 17/23 (2013.01); C03C 17/245 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An indium tin oxide film comprising indium tin oxide manufactured according to a method comprising:
sputtering indium and tin from a target onto a substrate to form the indium tin oxide over the substrate, the sputtering comprising moving the target relative to the substrate along a path over the substrate,
wherein the indium tin oxide film has a total thickness in a range of greater than 3 μm to 4 μm,
wherein the moving of the target comprises moving the target from an end of the path to an other end of the path during the sputtering of the indium and the tin from the target onto the substrate,
wherein during the sputtering of the indium and the tin from the target onto the substrate the target does not move substantially past the end of the path or the other end of the path,
wherein the end of the path is over an end of the substrate and the other end of the path is over an other end of the substrate,
wherein the indium tin oxide film comprises a first layer of indium tin oxide and a second layer of indium tin oxide over the first layer of indium tin oxide,
wherein a sheet resistance of the indium tin oxide film is in a range of 0.3 to less than 0.5 Ω/□,
wherein the indium tin oxide film is connected to one selected from a tab and a lead, and
the one selected from the tab and the lead grounds the indium tin oxide film.