US 12,337,289 B2
Chemical liquid preparation device, and substrate processing device
Hajime Nishide, Kyoto (JP); Takashi Izuta, Kyoto (JP); Takatoshi Hayashi, Kyoto (JP); Katsuhiro Fukui, Kyoto (JP); Koichi Okamoto, Kyoto (JP); Kazuhiro Fujita, Kyoto (JP); Atsuyasu Miura, Kyoto (JP); Kenji Kobayashi, Kyoto (JP); Sei Negoro, Kyoto (JP); and Hiroki Tsujikawa, Kyoto (JP)
Assigned to SCREEN Holdings Co., Ltd., Kyoto (JP)
Filed by SCREEN Holdings Co., Ltd., Kyoto (JP)
Filed on Jun. 27, 2024, as Appl. No. 18/755,680.
Application 17/867,693 is a division of application No. 16/114,253, filed on Aug. 28, 2018, granted, now 11,439,967, issued on Sep. 13, 2022.
Application 18/755,680 is a continuation of application No. 17/867,693, filed on Jul. 19, 2022, granted, now 12,064,739.
Claims priority of application No. 2017-183007 (JP), filed on Sep. 22, 2017.
Prior Publication US 2024/0342672 A1, Oct. 17, 2024
Int. Cl. B01F 35/82 (2022.01); B01F 23/231 (2022.01); B01F 23/237 (2022.01); B01F 35/21 (2022.01); B01F 35/22 (2022.01); G05D 11/00 (2006.01); G05D 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01); B01F 101/58 (2022.01)
CPC B01F 35/82 (2022.01) [B01F 23/231 (2022.01); B01F 23/237611 (2022.01); B01F 23/237612 (2022.01); B01F 23/23765 (2022.01); B01F 35/2132 (2022.01); B01F 35/2202 (2022.01); G05D 11/00 (2013.01); G05D 21/02 (2013.01); H01L 21/30608 (2013.01); H01L 21/32134 (2013.01); H01L 21/67017 (2013.01); H01L 21/67028 (2013.01); H01L 21/67051 (2013.01); H01L 21/67075 (2013.01); H01L 21/6708 (2013.01); B01F 2101/58 (2022.01)] 9 Claims
OG exemplary drawing
 
1. A chemical liquid preparation method of preparing a chemical liquid to be supplied to a substrate,
the chemical liquid being a TMAH-containing chemical liquid which contains tetramethylammonium hydroxide (TMAH),
the chemical liquid preparation method comprising:
a correspondence relationship preparing step of preparing a correspondence relationship between a supply flow rate ratio between an oxygen-containing gas and an inert-gas-containing gas and a convergent dissolved oxygen concentration in the TMAH-containing chemical liquid that is converged to when the oxygen-containing gas and the inert-gas-containing gas are supplied into the TMAH-containing chemical liquid at the supply flow rate ratio,
a concentration setting step of setting a target dissolved oxygen concentration in the TMAH-containing chemical liquid that corresponds to a desired etching rate,
a supply-flow-rate-ratio acquiring step of acquiring the supply flow rate ratio between the oxygen-containing gas and the inert-gas-containing gas corresponding to the target dissolved oxygen concentration in accordance with the correspondence relationship prepared in the correspondence relationship preparing step, and
a gas supplying step of supplying the oxygen-containing gas and the inert-gas-containing gas with the supply flow rate ratio acquired in the supply-flow-rate-ratio acquiring step.