	US 12,016,186 B2
	Semiconductor memory device
Song Yi Kim, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 25, 2021, as Appl. No. 17/329,700.
Claims priority of application No. 10-2020-0072485 (KR), filed on Jun. 15, 2020; and application No. 10-2020-0181275 (KR), filed on Dec. 22, 2020.
Prior Publication US 2021/0391385 A1, Dec. 16, 2021
Int. Cl. H01L 27/24 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H10B 63/00 (2023.01)

CPC H10B 63/30 (2023.02) [H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01)]

20 Claims

1. A semiconductor memory device, comprising:

first conductive lines provided on a substrate and extending in a first direction in parallel, each of the first conductive lines including a first end portion and a second end portion that are opposite to each other, the first direction being parallel to a top surface of the substrate;

first selection transistors respectively connected to the first end portions of the first conductive lines; and

second selection transistors respectively connected to the second end portions of the first conductive lines, wherein:

each of the first selection transistors has a first gate width, and

each of the second selection transistors has a second gate width smaller than the first gate width.