US 12,016,185 B1
Planar and trench capacitors for logic and memory applications
Somilkumar J. Rathi, San Jose, CA (US); Noriyuki Sato, Hillsboro, OR (US); Niloy Mukherjee, San Ramon, CA (US); Rajeev Kumar Dokania, Beaverton, OR (US); Amrita Mathuriya, Portland, OR (US); Tanay Gosavi, Portland, OR (US); Pratyush Pandey, Kensington, CA (US); Jason Y. Wu, Albany, CA (US); and Sasikanth Manipatruni, Portland, OR (US)
Assigned to Kepler Computing Inc., San Francisco, CA (US)
Filed by Kepler Computing Inc., San Francisco, CA (US)
Filed on Dec. 15, 2021, as Appl. No. 17/552,293.
Application 17/552,293 is a continuation of application No. 17/550,899, filed on Dec. 14, 2021.
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 53/30 (2023.01)
CPC H10B 53/30 (2023.02) 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first electrode structure and a second electrode structure within an etch stop layer comprising an insulator, the first electrode structure laterally separated from the second electrode structure, wherein the first electrode structure and the second electrode structure comprise:
a first conductive hydrogen barrier layer, and
a first conductive fill material on the first conductive hydrogen barrier layer;
a planar capacitor comprising a first ferroelectric material or a first paraelectric material on least a portion of the first electrode structure;
an encapsulation layer on the planar capacitor,
a dielectric on the encapsulation layer;
a via electrode on at least a portion of the planar capacitor, the via electrode comprising:
a second conductive hydrogen barrier layer; and
a second conductive fill material on the second conductive hydrogen barrier layer,
a trench within the dielectric, the trench on the second electrode structure;
a spacer along a sidewall of the trench; and
a non-planar capacitor within the trench, the non-planar capacitor comprising:
a bottom electrode that is substantially conformal along a base of the trench and the spacer, wherein the bottom electrode is in contact with the second electrode structure;
a dielectric layer substantially conformal to the bottom electrode, the dielectric layer comprising a second ferroelectric material or a second paraelectric material; and
a top electrode in contact with the dielectric layer.