US 12,016,179 B2
Three dimensional memory device containing resonant tunneling barrier and high mobility channel and method of making thereof
Peter Rabkin, Cupertino, CA (US); and Masaaki Higashitani, Cupertino, CA (US)
Assigned to SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed by SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed on Nov. 24, 2021, as Appl. No. 17/534,528.
Prior Publication US 2023/0164996 A1, May 25, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 43/27 (2023.01); G11C 16/10 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01)
CPC H10B 43/27 (2023.02) [G11C 16/10 (2013.01); H01L 29/40117 (2019.08); H01L 29/4234 (2013.01); H01L 29/66833 (2013.01); H01L 29/7926 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A memory device, comprising:
an alternating stack of insulating layers and control gate layers;
a memory opening vertically extending through the alternating stack; and
a memory opening fill structure comprising a memory film and a vertical semiconductor channel located within the memory opening,
wherein the memory film comprises a resonant tunneling barrier stack, a semiconductor barrier layer, and a memory material layer located between the resonant tunneling barrier stack and the semiconductor barrier layer;
wherein the resonant tunneling barrier stack comprises at least two semiconductor quantum wells.