US 12,016,171 B2
Semiconductor device and method for fabricating the same
Se Han Kwon, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Nov. 1, 2022, as Appl. No. 17/978,344.
Application 17/978,344 is a division of application No. 17/152,003, filed on Jan. 19, 2021, granted, now 11,532,631.
Claims priority of application No. 10-2020-0084606 (KR), filed on Jul. 9, 2020.
Prior Publication US 2023/0052958 A1, Feb. 16, 2023
Int. Cl. H10B 12/00 (2023.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01)
CPC H10B 12/0335 (2023.02) [H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 23/53257 (2013.01); H01L 23/5329 (2013.01); H01L 23/535 (2013.01); H10B 12/315 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a storage node contact hole provided between bit line structures;
a first plug tilling a lower portion of the storage node contact hole;
a second plug protruding from the first plug;
an insulation layer spacer partially covering a side wall of the second plug and partially exposing the side wall of the second plug; and
a storage node having an extension contacting the exposed side wall of the second plug.