US 12,015,246 B2
Vertical cavity surface emitting laser and corresponding fabricating method
Qian Fan, Jiangsu (CN); Xianfeng Ni, Jiangsu (CN); Bin Hua, Jiangsu (CN); and Ying Cui, Jiangsu (CN)
Assigned to SUZHOU HANHUA SEMICONDUCTOR CO., LTD., Jiangsu (CN)
Filed by SUZHOU HANHUA SEMICONDUCTOR CO., LTD., Jiangsu (CN)
Filed on Jun. 3, 2021, as Appl. No. 17/338,155.
Claims priority of application No. 202010499463.2 (CN), filed on Jun. 5, 2020.
Prior Publication US 2021/0384705 A1, Dec. 9, 2021
Int. Cl. H01S 5/183 (2006.01); H01S 5/042 (2006.01); H01S 5/20 (2006.01)
CPC H01S 5/18308 (2013.01) [H01S 5/04252 (2019.08); H01S 5/18369 (2013.01); H01S 5/18377 (2013.01); H01S 5/209 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of fabricating vertical cavity surface emitting laser, comprising:
providing a first substrate stacked with a dielectric distributed Bragg reflector (DBR) and a first bonding layer sequentially, and a second substrate stacked with a etch-stop layer, a heavily doped layer, an active region, a current-confinement layer and an arsenide DBR sequentially;
providing a third substrate, and gluing the third substrate to the arsenide DBR by a temporary bonding process;
removing the second substrate and the etch-stop layer to expose the heavily doped layer;
forming a second bonding layer which covers the heavily doped layer;
bonding the second bonding layer and the first bonding layer by van der Waals direct bonding process to obtain a combined bonding pair;
removing the third substrate to expose the arsenide DBR;
forming a p-type electrode contact on the arsenide DBR;
etching the arsenide DBR, the current-confinement layer, the active region and the heavily doped layer to form a mesa in the heavily doped layer;
forming an n-type electrode contact on the bottom wall of the mesa.