US 12,015,112 B2
Light emitting diode
Jae Kwon Kim, Gyeonggi-do (KR); Min Chan Heo, Gyeonggi-do (KR); Kyoung Wan Kim, Gyeonggi-do (KR); Jong Kyu Kim, Gyeonggi-do (KR); Hyun A Kim, Gyeonggi-do (KR); and Joon Sup Lee, Gyeonggi-do (KR)
Assigned to SEOUL VIOSYS CO., LTD., Ansan-si (KR)
Filed by SEOUL VIOSYS CO., LTD., Gyeonggi-do (KR)
Filed on Jul. 29, 2021, as Appl. No. 17/389,025.
Application 17/389,025 is a continuation of application No. PCT/KR2019/017219, filed on Dec. 6, 2019.
Claims priority of application No. 10-2019-0012666 (KR), filed on Jan. 31, 2019; and application No. 10-2019-0012988 (KR), filed on Jan. 31, 2019.
Prior Publication US 2021/0359188 A1, Nov. 18, 2021
Int. Cl. H01L 33/62 (2010.01); H01L 27/15 (2006.01); H01L 33/10 (2010.01); H01L 33/46 (2010.01)
CPC H01L 33/62 (2013.01) [H01L 27/156 (2013.01); H01L 33/10 (2013.01); H01L 33/46 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A light emitting diode, comprising:
a first conductivity type semiconductor layer;
a mesa disposed on the first conductivity type semiconductor layer, the mesa including an active layer and a second conductivity type semiconductor layer; and
a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, the lower insulation layer having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer,
a transparent conductive oxide layer disposed on the mesa and electrically connected to the second conductivity type semiconductor layer;
a dielectric layer covering the conductive oxide layer and having a plurality of openings exposing the conductive oxide layer; and
a metal reflection layer disposed on the dielectric layer and connected to the conductive oxide layer through the plurality of openings of the dielectric layer,
wherein the lower insulation layer is disposed on the metal reflection layer, and the first opening exposes the first conductivity type semiconductor layer, and the second opening exposes the metal reflection layer, and wherein:
the active layer generates light having a peak wavelength of about 500 nm or less.