	US 12,015,110 B2
	Flip chip LED with side reflectors encasing side surfaces of a semiconductor structure and phosphor
Iwan-Wahyu Saputra, Singapore (SG); and Yeow-Meng Teo, Singapore (SG)
Assigned to Lumileds LLC, San Jose, CA (US)
Filed by LUMILEDS LLC, San Jose, CA (US)
Filed on Aug. 22, 2022, as Appl. No. 17/892,788.
Application 17/892,788 is a continuation of application No. 16/067,016, granted, now 11,424,396, previously published as PCT/US2016/066413, filed on Dec. 13, 2016.
Claims priority of provisional application 62/272,416, filed on Dec. 29, 2015.
Claims priority of application No. 16160421 (EP), filed on Mar. 15, 2016.
Prior Publication US 2022/0399483 A1, Dec. 15, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/60 (2010.01); H01L 33/46 (2010.01); H01L 33/48 (2010.01); H01L 33/50 (2010.01); H01L 33/56 (2010.01)

CPC H01L 33/60 (2013.01) [H01L 33/46 (2013.01); H01L 33/486 (2013.01); H01L 33/50 (2013.01); H01L 33/505 (2013.01); H01L 33/56 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0058 (2013.01)]

19 Claims

1. A light-emitting diode (LED) device comprising:

a semiconductor structure comprising a top surface, a bottom surface opposite the top surface, and a plurality of side surfaces;

a wavelength-converting structure over the top surface of the semiconductor structure, the wavelength-converting structure having a top surface, a bottom surface opposite the top surface, and a plurality of side surfaces;

at least two electrodes electrically coupled to the semiconductor structure via the bottom surface of the semiconductor structure;

a reflective layer completely encasing the plurality of side surfaces of both the semiconductor structure and the wavelength-converting structure and extending to the top surface of the wavelength-converting structure, wherein the reflective layer has a top surface, a bottom surface opposite the top surface, and a plurality of side surfaces; and

a protective layer encasing the side surfaces of the reflective layer.