US 12,015,107 B2
Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
Sebastian Pickel, Regensburg (DE); Johannes Saric, Regensburg (DE); Wolfgang Schmid, Gundelshausen (DE); Anna Strozecka-Assig, Regensburg (DE); and Johannes Baur, Regensburg (DE)
Assigned to OSRAM OLED GMBH, Regensburg (DE)
Filed by OSRAM OLED GmbH, Regensburg (DE)
Filed on Mar. 9, 2023, as Appl. No. 18/180,992.
Application 18/180,992 is a continuation of application No. 16/980,910, granted, now 11,631,787, previously published as PCT/EP2019/056458, filed on Mar. 14, 2019.
Claims priority of application No. 102018106001.7 (DE), filed on Mar. 15, 2018; and application No. 102018107673.8 (DE), filed on Mar. 29, 2018.
Prior Publication US 2023/0223495 A1, Jul. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01); H01L 33/46 (2010.01); H01L 33/30 (2010.01)
CPC H01L 33/38 (2013.01) [H01L 33/387 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/46 (2013.01); H01L 33/30 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An optoelectronic semiconductor chip comprising:
a semiconductor layer sequence with an active zone for generating a radiation;
a metal mirror for the radiation;
a protective metallization directly on a side of the metal mirror facing away from the semiconductor layer sequence; and
an adhesion promoting layer directly on a side of the metal mirror facing the semiconductor layer sequence,
wherein the adhesion promoting layer is an encapsulation layer for the metal mirror so that the metal mirror is completely encapsulated by the adhesion promoting layer together with the protective metallization.