CPC H01L 33/06 (2013.01) [H01L 27/156 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/52 (2013.01); H01L 33/60 (2013.01)] | 20 Claims |
1. A top emitting quantum dot light emitting diode (QLED) apparatus for an emissive display device sub-pixel, with at least one bank defining an emissive region of the emissive display device sub-pixel, the top emitting QLED apparatus comprising:
an emissive layer deposited in the emissive region between a first electrode and a second electrode;
the first electrode comprising a reflective metal;
the second electrode comprising a transparent conductive electrode and an auxiliary electrode;
the at least one bank comprising a sloped portion adjacent to the emissive region,
wherein the auxiliary electrode comprises a reflective conductive metal and is configured to cover the sloped portion,
the sloped portion is configured at an angle, such that the auxiliary electrode reflects internally reflected light out of the emissive display device sub-pixel in a viewing direction, and
at least a portion of the transparent conductive electrode is positioned between the sloped portion and the auxiliary electrode.
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