US 12,015,074 B2
High electron mobility transistor and method for forming the same
Chun-Han Song, Taoyuan (TW); Rong-Hao Syu, Taoyuan (TW); Yu-An Liao, Taoyuan (TW); and Chia-Ming Chang, Taoyuan (TW)
Assigned to WIN SEMICONDUCTORS CORP., Taoyuan (TW)
Filed by WIN SEMICONDUCTORS CORP., Taoyuan (TW)
Filed on Feb. 22, 2022, as Appl. No. 17/677,293.
Claims priority of provisional application 63/165,299, filed on Mar. 24, 2021.
Prior Publication US 2022/0310823 A1, Sep. 29, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/66431 (2013.01) [H01L 29/0847 (2013.01); H01L 29/7786 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A high electron mobility transistor (HEMT) structure, comprising:
a compound semiconductor substrate;
a gate electrode disposed on the compound semiconductor substrate;
a source electrode disposed on the compound semiconductor substrate at a first side of the gate electrode;
a drain electrode disposed on the compound semiconductor substrate at a second side of the gate electrode, wherein the first side is opposite to the second side;
a first metal pillar disposed on the source electrode;
a second metal pillar disposed on the drain electrode;
a dielectric layer disposed on the compound semiconductor substrate, wherein the dielectric layer surrounds the gate electrode, the first metal pillar, and the second metal pillar; and
a metal layer disposed on the dielectric layer, wherein the metal layer straddles the gate electrode, the first metal pillar, and the second metal pillar.