US 12,015,073 B2
Thin film structure including dielectric material layer and electronic device including the same
Woojin Lee, Suwon-si (KR); Kiyoung Lee, Seoul (KR); Yongsung Kim, Suwon-si (KR); and Eunsun Kim, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 10, 2022, as Appl. No. 17/984,877.
Application 17/984,877 is a continuation of application No. 16/779,863, filed on Feb. 3, 2020, granted, now 11,532,722.
Claims priority of application No. 10-2019-0096915 (KR), filed on Aug. 8, 2019.
Prior Publication US 2023/0074895 A1, Mar. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/51 (2006.01); C01G 23/00 (2006.01); C01G 35/00 (2006.01); H10B 51/00 (2023.01); H10B 53/00 (2023.01)
CPC H01L 29/516 (2013.01) [C01G 23/006 (2013.01); C01G 35/006 (2013.01); H10B 51/00 (2023.02); H10B 53/00 (2023.02); C01P 2002/34 (2013.01); C01P 2002/52 (2013.01); C01P 2002/77 (2013.01); C01P 2006/40 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A memory device comprising:
a dielectric material layer; and
first and second metal layers on both sides of the dielectric material layer,
wherein the dielectric material layer comprising a compound expressed by ABO3, wherein at least one of A and B in ABO3 is substituted and doped with another atom having a larger atom radius, and ABO3 becomes A1-xA′xB1-yB′yO3 through substitution and doping, where x>0, y>=0, and a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B,
wherein a dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration, and
wherein A is Sr, B is Ti,
A′ is any one selected from Cs, Rb, and K, and
B′ is any one selected from Zr, Hf, Sn, Nb, and Ta.