US 12,015,072 B2
Semiconductor device including cation species, manufacturing method thereof, and electronic equipment
Kazuyuki Tomida, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/299,694
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Nov. 29, 2019, PCT No. PCT/JP2019/046711
§ 371(c)(1), (2) Date Jun. 3, 2021,
PCT Pub. No. WO2020/129571, PCT Pub. Date Jun. 25, 2020.
Claims priority of application No. 2018-238158 (JP), filed on Dec. 20, 2018.
Prior Publication US 2022/0059669 A1, Feb. 24, 2022
Int. Cl. H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/516 (2013.01) [H01L 27/092 (2013.01); H01L 29/40111 (2019.08); H01L 29/78391 (2014.09); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a channel portion; and
a gate electrode provided on a side opposite to the channel portion with a gate insulating film interposed between the gate electrode and the channel portion,
wherein the gate insulating film incudes a first portion having a first transition metal oxide, and a second portion having a second transition metal oxide and cation species and having a concentration of the cation species different from the first portion, and
wherein the first portion does not include the cation species.