US 12,015,064 B2
Semiconductor devices having supporter structures
Hoin Lee, Hwaseong-si (KR); and Kiseok Lee, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 1, 2022, as Appl. No. 17/683,765.
Claims priority of application No. 10-2021-0100794 (KR), filed on Jul. 30, 2021.
Prior Publication US 2023/0035660 A1, Feb. 2, 2023
Int. Cl. H01L 29/423 (2006.01); H01L 29/40 (2006.01)
CPC H01L 29/423 (2013.01) [H01L 29/402 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
lower electrodes;
a first supporter structure including first supporter patterns interconnecting the lower electrodes, wherein side surfaces of the first supporter patterns and side surfaces of the lower electrodes that are exposed by the first supporter patterns at least partially define a first open region, the first supporter patterns spaced apart from one another, the first open region extending among the first supporter patterns in a horizontal direction;
a dielectric layer covering the first supporter structure and the lower electrodes;
a second supporter structure on the first supporter structure and spaced apart from the frst supporter structure in a vertical direction, the second supporter structure interconnecting the lower electrodes; and
an upper electrode on the dielectric layer,
wherein a distance between adjacent ones of the first supporter patterns is smaller than or equal to a pitch of the lower electrodes.