US 12,015,061 B2
Radio frequency switch
Jongmo Lim, Suwon-si (KR); Wonsun Hwang, Suwon-si (KR); Byeonghak Jo, Suwon-si (KR); Yoosam Na, Suwon-si (KR); and Youngsik Hur, Suwon-si (KR)
Assigned to Samsung Electro-Mechanics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electro-Mechanics Co., Ltd., Suwon-si (KR)
Filed on Feb. 5, 2021, as Appl. No. 17/168,531.
Claims priority of application No. 10-2020-0080205 (KR), filed on Jun. 30, 2020.
Prior Publication US 2021/0408248 A1, Dec. 30, 2021
Int. Cl. H01L 27/02 (2006.01); H01L 29/417 (2006.01); H03K 17/081 (2006.01)
CPC H01L 29/41758 (2013.01) [H01L 27/0207 (2013.01); H03K 17/08104 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A radio frequency (RF) switch configured to switch a RF signal input to a first terminal, the RF switch comprising:
a first transistor, disposed at a first distance from the first terminal, and configured to switch the RF signal; and
a second transistor, disposed at a second distance from the first terminal, and configured to switch the RF signal,
wherein the first distance is shorter than the second distance,
wherein a number of first contact vias formed in a first electrode in the first transistor is greater than a number of second contact vias formed in a second electrode of the second transistor,
wherein a width of the first electrode of the first transistor is larger than a width of the second electrode of the second transistor, and
wherein a distance between the first electrode of the first transistor and a control electrode of the first transistor is shorter than a distance between the second electrode of the second transistor and a control electrode of the second transistor.