US 12,015,058 B2
Semiconductor device
Yoshiharu Kato, Matsumoto (JP); Toru Ajiki, Matsumoto (JP); Tohru Shirakawa, Matsumoto (JP); Misaki Takahashi, Matsumoto (JP); Kaname Mitsuzuka, Matsumoto (JP); Takashi Yoshimura, Matsumoto (JP); Yuichi Onozawa, Matsumoto (JP); Hiroshi Takishita, Matsumoto (JP); and Soichi Yoshida, Kanagawa (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed by FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed on Jun. 13, 2023, as Appl. No. 18/333,562.
Application 18/333,562 is a continuation of application No. 17/078,042, filed on Oct. 22, 2020, granted, now 11,715,771.
Application 17/078,042 is a continuation of application No. PCT/JP2019/044756, filed on Nov. 14, 2019.
Claims priority of application No. 2018-215549 (JP), filed on Nov. 16, 2018; and application No. 2019-203105 (JP), filed on Nov. 8, 2019.
Prior Publication US 2023/0335599 A1, Oct. 19, 2023
Int. Cl. H01L 29/36 (2006.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01)
CPC H01L 29/36 (2013.01) [H01L 21/265 (2013.01); H01L 29/0615 (2013.01); H01L 29/1095 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface, wherein
the semiconductor substrate includes a hydrogen containing region including hydrogen,
the hydrogen containing region has one or more hydrogen chemical concentration peaks in a depth direction,
a carrier concentration distribution in the depth direction of the hydrogen containing region includes:
a first carrier concentration peak;
a second carrier concentration peak that is closest to the first carrier concentration peak, among carrier peaks arranged closer to the upper surface than the first carrier concentration peak;
a third carrier concentration peak arranged closer to the upper surface than the second carrier concentration peak;
a first inter peak region arranged between the first carrier concentration peak and the second carrier concentration peak;
a second inter peak region arranged between the second carrier concentration peak and the third carrier concentration peak; and
an inter-peaks concentration peak arranged in the second inter peak region such that the concentration peak does not overlap each of the hydrogen chemical concentration peaks in the second carrier concentration peak and the third carrier concentration peak; and
a local minimum value of a carrier concentration in the first inter peak region is smaller than a local minimum value of a carrier concentration in the second inter peak region.